Investigation of the Features of InAs/GaAs Structures with Quantum Dots by Information-Correlation Characteristics

被引：0
|
作者：
N. V. Rybina
A. V. Zdoroveyschev
N. B. Rybin
机构：
[1] Ryazan State Radio Engineering University,
[2] Nizhny Novgorod State University,undefined
来源：
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques | 2021年 / 15卷
关键词：
two-dimensional detrended fluctuation analysis; average-mutual-information method; information-correlation characteristics; ordering; surface; InAs/GaAs structure with quantum dots; continuous wavelet transform; correlation vector;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：384 / 388
页数：4
相关论文
共 50 条
  • [1] Investigation of the Features of InAs/GaAs Structures with Quantum Dots by Information-Correlation Characteristics
    Rybina, N., V
    Zdoroveyschev, A., V
    Rybin, N. B.
    JOURNAL OF SURFACE INVESTIGATION, 2021, 15 (02): : 384 - 388
  • [2] The effect of InAs quantum layer and quantum dots on the electrical characteristics of GaAs structures
    Dózsa, L
    Horváth, ZJ
    Van Tuyen, V
    Podör, B
    Mohácsy, T
    Franchi, S
    Frigeri, P
    Gombia, E
    Mosca, R
    MICROELECTRONIC ENGINEERING, 2000, 51-2 : 85 - 92
  • [3] In-line correlation and ordering of InAs/GaAs multistacked Quantum Dots structures
    Latini, V.
    Placidi, E.
    Arciprete, F.
    Patella, F.
    JOURNAL OF CRYSTAL GROWTH, 2015, 419 : 138 - 142
  • [4] Electron microscopy of GaAs Structures with InAs and as quantum dots
    V. N. Nevedomskii
    N. A. Bert
    V. V. Chaldyshev
    V. V. Preobrazhenskii
    M. A. Putyato
    B. R. Semyagin
    Semiconductors, 2011, 45 : 1580 - 1582
  • [5] Capacitance spectroscopy of InAs/GaAs quantum dots structures
    Chiquito, AJ
    Pusep, YA
    Mergulhao, S
    Galzerani, JC
    Moshegov, NT
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 1099 - 1100
  • [6] Electron Microscopy of GaAs Structures with InAs and As Quantum Dots
    Nevedomskii, V. N.
    Bert, N. A.
    Chaldyshev, V. V.
    Preobrazhenskii, V. V.
    Putyato, M. A.
    Semyagin, B. R.
    SEMICONDUCTORS, 2011, 45 (12) : 1580 - 1582
  • [7] Characteristics of InAs quantum dots on GaAs/InP with different InAs coverage
    Wang, XQ
    Du, GT
    Jin, Z
    Li, MT
    Yin, JZ
    Li, ZT
    Liu, SY
    Yang, SR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (05): : 2523 - 2526
  • [8] Optical and Material Characteristics of InAs/GaAs Quantum Dots
    Huang, Sa
    Huang, Pin-Fang
    Feng, Zhe Chuan
    Brown, April
    Lu, Weijie
    NANOENGINEERING: FABRICATION, PROPERTIES, OPTICS, AND DEVICES V, 2008, 7039
  • [9] Optical characteristics of InAs quantum dots on GaAs matrix by using various InGaAs structures
    Kong Lingmin
    Cai Jiafa
    Wu Zhengyun
    Gong Zheng
    Fang Zhidan
    Niu Zhichuan
    JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION, 2006, 21 (02): : 76 - 79
  • [10] Optical Characteristics of InAs Quantum Dots on GaAs Matrix by Using Various InGaAs Structures
    孔令民
    吴正云
    JournalofWuhanUniversityofTechnology(MaterialsScienceEdition), 2006, (02) : 76 - 79
12345