Spectral photosensitivity ofpSi-n(ZnSe)1 -x-y (Si2) x (GaP) y Structures

被引：0

作者：

Saidov A.S. ^{[1
]}

Usmonov S.N. ^{[1
]}

Rakhmonov U.K. ^{[1
]}

机构：

[1] Physicotechnical Institute, Physics of the Sun Scientific Production Association, Uzbek Academy of Sciences, Tashkent

来源：

Applied Solar Energy | 2010年 / 46卷 / 3期

关键词：

ZnSe; Epitaxial Layer; Gallium Arsenide; Liquid Phase Epitaxy; Apply Solar Energy;

D O I：

10.3103/S0003701X10030114

中图分类号：

学科分类号：

摘要：

Epitaxial layers of substitutional solid solution (ZnSe) 1-x-y(Si2) x (GaP) y (0.1 ≤x≤ 1, 0≤y≤0.9) on pSi substrates were developed from a limited volume of tin solution-melt using the method of a liquid phase epitaxy. The spectral dependency of photosensitivity of the pSi-n(ZnSe)1 -x-y (Si 2) x (Ga.P) y structures was studied and the peaks of photoresponses at energies of photons of 1.6, 1.66, and 1.92 eV at room temperature were discovered. It was shown that the forward-bi as regions of the volt-ampere characteristics of structures under study can be described by the power dependence of -I = I 0 + B • V m with various values of a power index at various values of the voltage applied. © 2010 Allerton Press, Inc.

引用

页码：209 / 211

页数：2

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