Methods of Charge-Carrier Mobility Measurements in Structures Based on High-Resistivity Gallium Arsenide with Deep Centers

被引：0
|
作者：
I. D. Chsherbakov
L. K. Shaimerdenova
A. V. Shemeryankina
M. S. Skakunov
O. P. Tolbanov
A. V. Tyazhev
A. N. Zarubin
M. S. Trofimov
机构：
[1] National Research Tomsk State University,
来源：
Russian Physics Journal | 2023年 / 66卷
关键词：
X-ray sensor; gallium arsenide; laser-induced transient-current technique; Hall’s effect; chargecarrier mobility;
D O I：
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中图分类号：
学科分类号：
摘要：
One of the most important parameters determining the efficiency of X-ray sensors is the μ∙τ product, where μ is the charge-carrier mobility and τ is the carrier lifetime. This paper presents results of measurements of the charge-carrier mobility in high-resistivity (HR) GaAs:Cr sensors using two methods: the laser-induced transient-current technique (LTCT) and the Hall measurements. It has been found that the concentration of holes in the HR GaAs:Cr material exceeds that of electrons, whereas the value of the electron drift mobility is in the range 4000–4300 cm2/(V·s).
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页码：626 / 631
页数：5
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    Skakunov, M. S.
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