Microwave photoresistance of a two-dimensional electron gas in a ballistic microbar

被引：0
作者：
A. A. Bykov
机构：
[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Branch
来源：
JETP Letters | 2009年 / 89卷
关键词：
73.23.-b; 73.40.Gk;
D O I：
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摘要：
The effect of millimeter microwave radiation on the electron transport of two-dimensional (2D) ballistic microbars formed on the basis of individual GaAs quantum wells at a temperature of T = 4.2 K in magnetic fields B < 0.6 T has been investigated. Differences have been revealed in the magnetic field dependences of the microwave photoresistance of a 2D electron gas in Hall bars with a length L and a width W for the cases L, W > lp and L, W < lp, where lp is the electron mean free path for momentum. The microwave photoresistance in macroscopic bars (L, W > lp) is a periodic alternating function of the inverse magnetic field; in microbars (L, W < lp), it is a periodic positive function of 1/B. The experimental results indicate that the mechanisms of the microwave photoresistance of a 2D electron gas are different for macroscopic and microscopic bars.
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页码：575 / 578
页数：3
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