HgS nanoparticles: Structure and optical properties

被引:0
作者
B.K. Patel
S. Rath
S.N. Sarangi
S.N. Sahu
机构
[1] Institute of Physics,Sachivalaya Marg
来源
Applied Physics A | 2007年 / 86卷
关键词
HgTe; Convergent Beam Electron Diffraction; Optical Absorption Study; Electrochemical Route; Laue Zone;
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摘要
Nanocrystalline HgS thin films were synthesized by using an electrochemical route under galvanostatic conditions. Quantum size effects have resulted in the change of the semi-metallic behavior of bulk β-HgS (Eg=-0.5 eV) to semiconducting behavior with an absorption onset around 1.4 eV as confirmed from optical absorption studies. Glancing angle X-ray diffraction analysis confirms the presence of β-HgS (zinc-blend structure) with prominent crystallographic planes of (200), (220) and (311) in the deposit. This is consistent with results obtained from transmission electron diffraction studies. The Raman scattering measurements identified a broad 1LO confined phonon mode at 247 cm-1 which suggests that the crystalline sizes are small.
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页码:447 / 450
页数:3
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共 47 条
  • [1] Eychmüller A.(1992)undefined J. Luminesc. 53 113-undefined
  • [2] Hässelbarth A.(1996)undefined Phys. Rev. B 53 R13242-undefined
  • [3] Weller H.(2004)undefined Eur. Phys. Lett. 67 294-undefined
  • [4] Mews A.(1999)undefined Adv. Mater. 11 552-undefined
  • [5] Kadavanich A.V.(1994)undefined Phys. Rev. B 49 17072-undefined
  • [6] Banin U.(1998)undefined Nanostruct. Mater. 10 131-undefined
  • [7] Alivisatos A.(1995)undefined Phys. Rev. B 52 R16997-undefined
  • [8] Rath S.(1970)undefined Solid State Commun. 8 1291-undefined
  • [9] Sahu S.N.(1991)undefined Semicond. Sci. Technol. 6 C36-undefined
  • [10] Rogach A.(1997)undefined Phys. Rev. Lett. 78 3165-undefined