Magneto-Photo-Thermo-Microstretch Semiconductor Elastic Medium Due to Photothermal Transport Process

被引：0
作者：
Kh. Lotfy
A. A. El-Bary
机构：
[1] Zagazig University,Department of Mathematics, Faculty of Science
[2] Taibah University,Department of Mathematics, College of Science
[3] Arab Academy for Science,National Committee for Mathematics
[4] Technology and Maritime Transport,undefined
[5] Academy of Scientific Research and Technology,undefined
来源：
Silicon | 2022年 / 14卷
关键词：
Thermoelasticity theory; Semiconductor; Magnetic field ; Microstretch; Plasma waves; Photothermal;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Electro-magnetic-thermal-microstretch elastic mathematical-physical model of semiconductor medium is investigated. The governing equations are studied in the context of photo-thermoelasticity theory during photothermal transport process. The semiconductor medium is exposed to an external magnetic field and a beam of laser. The coupled between electromagnetic field, thermal, elastic and plasma waves when the inertia-microstretch properties of elastic semiconductor material is taken into account. The main physical quantities are taken during two dimensions (2D) electronic-elastic deformation. The microinertia of microelement under the impact of external magnetic field is taken into consideration. The harmonic wave solutions in 2D with time variation is used to obtain the main physical fields. To obtain the complete solutions of the physical fields, some mechanical-thermal-elastic and plasma conditions for the semiconductor medium are taken at the boundary. The physical constants of the silicon (Si) material are used to make the numerical simulations and obtained the physical variables with the horizontal distance graphically. Many comparisons are made according to the thermal memories and the magnetic field influence.
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页码：4809 / 4821
页数：12
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