Optical properties of the Si-doped GaN/Al2O3 films

被引：4

作者：

Zayats, N. S. ^{[1
]}

Gentsar, P. O. ^{[1
]}

Boiko, V. G. ^{[1
]}

Litvin, O. S. ^{[1
]}

Vuychik, M. V. ^{[1
]}

Stronski, A. V. ^{[1
]}

Yanchuk, I. B. ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Lashkarev Inst Semicond Phys, UA-03028 Kiev, Ukraine

来源：

SEMICONDUCTORS | 2009年 / 43卷 / 05期

关键词：

VAPOR-PHASE EPITAXY; GAN; RAMAN; SPECTROSCOPY; BEHAVIOR;

D O I：

10.1134/S106378260905008X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Morphological and optical studies of the Si-doped GaN films (doping level N (Si) = 1.5 x 10(19) cm(-3)) grown by vapor-phase epitaxy from metalorganic compounds on a sapphire substrate oriented along the c axis are conducted. For the grown GaN films, the following characteristics are obtained: energy of electron transition E (0), absorption coefficient alpha, refractive index n, and frequencies of transverse and longitudinal optical lattice vibrations characteristic of the crystalline GaN films.

引用

页码：590 / 593

页数：4

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