Transverse Nernst-Ettingshausen effect in HgSe:Fe,Ga crystals containing mixed-valence iron impurities

The transverse Nernst-Ettingshausen effect is investigated experimentally and theoretically for HgSe:Fe,Ga samples with various iron and gallium impurity contents. It is shown that the unusual dependence of the magnitude and sign of the effect on the gallium impurity content are attributable to their influence on the degree of spatial ordering of the trivalent iron ions and, accordingly, on the nature of the scattering of conduction electrons. The results of the calculations agree qualitatively with the experimental data.