Heating of charge carriers and rectification of current in asymmetrical p-n junction in a microwave field

被引：0
|
作者：
M. G. Dadamirzayev
机构：
[1] Namangan Engineering Pedagogical Institute,Physicotechnical Institute
[2] Academy of Sciences of the Republic Uzbekistan,undefined
来源：
Semiconductors | 2011年 / 45卷
关键词：
Charge Carrier; Electron Temperature; Uzbekistan; Open Circuit Voltage; Microwave Field;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The emf Uoc of hot charge carriers generated in an asymmetrical p-n junction in a microwave electromagnetic field is determined by hot holes despite the fact that the temperature of electrons is much higher than that of holes. It is established that the open-circuit voltage depends on the temperature of the carriers, which determine the total current through p-n junction.
引用
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页码：288 / 291
页数：3
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