Thin porous anodic alumina films: Interface trap density determination

被引：0
|
作者：
M. Theodoropoulou
P. K. Karahaliou
S. N. Georga
C. A. Krontiras
M. N. Pisanias
M. Kokonou
A. G. Nassiopoulou
机构：
[1] University of Patras,Department of Physics
[2] IMEL/NCSR Demokritos,undefined
来源：
Ionics | 2005年 / 11卷
关键词：
Dielectric Spectroscopy; Anodic Alumina; Applied Bias; Alumina Film; Trap Density;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The electrical properties of thin porous alumina films in the form of MOS structures were studied with dielectric spectroscopy at room temperature. The thickness of the samples was found to be approximately 95 nm with a cross section area of 1.6×10−3 cm2.C-V andG-V measurements were performed by applying a loop sweep voltage 2.0 V to −5.0 V. Correction to the measurements were performed by considering a series resistanceRS and leakage currentIDC.
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页码：236 / 239
页数：3
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