Automated measurement and analysis of sidewall roughness using three-dimensional atomic force microscopy

被引：1

作者：

Yoo S.-B. ^{[1
]}

Yun S.-H. ^{[1
]}

Jo A.-J. ^{[1
]}

Cho S.-J. ^{[1
]}

Cho H. ^{[2
]}

Lee J.-H. ^{[1
]}

Ahn B.-W. ^{[1
]}

机构：

[1] Park Systems Corp., 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si

[2] Imec, Remisebosweg 1, Leuven

来源：

Applied Microscopy | 2022年 / 52卷 / 01期

关键词：

3D-AFM; AFM; Measurement and analysis; Metrology and inspection; Sidewall roughness;

D O I：

10.1186/s42649-022-00070-5

中图分类号：

学科分类号：

摘要：

As semiconductor device architecture develops, from planar field-effect transistors (FET) to FinFET and gate-all-around (GAA), there is an increased need to measure 3D structure sidewalls precisely. Here, we present a 3-Dimensional Atomic Force Microscope (3D-AFM), a powerful 3D metrology tool to measure the sidewall roughness (SWR) of vertical and undercut structures. First, we measured three different dies repeatedly to calculate reproducibility in die level. Reproducible results were derived with a relative standard deviation under 2%. Second, we measured 13 different dies, including the center and edge of the wafer, to analyze SWR distribution in wafer level and reliable results were measured. All analysis was performed using a novel algorithm, including auto flattening, sidewall detection, and SWR calculation. In addition, SWR automatic analysis software was implemented to reduce analysis time and to provide standard analysis. The results suggest that our 3D-AFM, based on the tilted Z scanner, will enable an advanced methodology for automated 3D measurement and analysis. © 2022, The Author(s).

引用

共 13 条

[1]

Ahn B.W., Cho S.J., Lee J.S., Park S.I., Development of rotational z-scanner for 3D-AFMto measure nano structure side wall property, Proceedings of the Korean Society of Precision Engineering Conference, 849, (2011)

[2]

Barrett R., Quate C.F., Optical scan‐correction system applied to atomic force microscopy, Review of Scientific Instruments, 62, 6, (1991)

[3]

Baselt D.R., Baldeschwieler J.D., Scanned‐cantilever atomic force microscope, Review of scientific instruments, 64, 4, (1993)

[4]

Binning G., Quate C., Gerber C., Atomic force microscope, Physical Review Letters, 56, 9, (1986)

[5]

Cho S.J., Ahn B.W., Kim J., Lee J.M., Hua Y., Yoo Y.K., Park S.I., Three-dimensional imaging of undercut and sidewall structures by atomic force microscopy, Review of Scientific Instruments, 82, 2, (2011)

[6]

Hansma P.K., Drake B., Grigg D., Prater C.B., Yashar F., Gurley G., Eligns V., Feinstein S., Lal R., A new, optical ‐ lever based atomic force microscope, Journal of Applied Physics, 76, 2, (1994)

[7]

Hua Y., Buenviaje-Coggins C., Lee Y.H., Lee J.M., Ryang K.D., Park S.I., New three-dimensional AFM for CD measurement and sidewall characterization, Metrology, Inspection, and Process Control for Microlithography XXV, 7971, (2011)

[8]

Hua Y., Buenviaje-Coggins C., Lee Y.H., Park S.I., High-throughput and non-destructive sidewall roughness measurement using 3-dimensional atomic force microscopy, Metrology, Inspection, and Process Control for Microlithography XXVI, 8324, (2012)

[9]

Hutchinson J.M., Shot-noise impact on resist roughness in EUV lithography, Emerging Lithographic Technologies II, 3331, (1998)

[10]

Metrology

← 1 2 →