Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor

被引：0
|
作者：
A. É. Atamuratov
S. Z. Zainabidinov
A. Yusupov
Kh. S. Daliev
K. M. Adinaev
机构：
[1] Ugrench State University (Al-Khorezmi),
来源：
Technical Physics | 1997年 / 42卷
关键词：
Radiation; Energy Spectrum; Interfacial State;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
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页码：1106 / 1107
页数：1
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