Highly Efficient and Accurate Numerical Schemes for the Epitaxial Thin Film Growth Models by Using the SAV Approach

被引:0
作者
Qing Cheng
Jie Shen
Xiaofeng Yang
机构
[1] Xiamen University,School of Mathematical Sciences and Fujian Provincial Key Laboratory on Mathematical Modeling and High Performance Scientific Computing
[2] Purdue University,Department of Mathematics
[3] University of South Carolina,Department of Mathematics
[4] Beijing University of Technology,Beijing Institute for Scientific and Engineering Computing
来源
Journal of Scientific Computing | 2019年 / 78卷
关键词
Thin film epitaxy; Gradient flow; Energy stable; Coarsening dynamics;
D O I
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中图分类号
学科分类号
摘要
We develop in this paper highly efficient, second order and unconditionally energy stable schemes for the epitaxial thin film growth models by using the scalar auxiliary variable (SAV) approach. A main difficulty here is that the nonlinear potential for the model without slope selection is not bounded from below so the SAV approach can not be directly applied. We overcome this difficulty with a suitable splitting of the total free energy density into two parts such that the integral of the part involving the nonlinear potential becomes bounded from below so that the SAV approach can be applied. We then construct a set of linear, second-order and unconditionally energy stable schemes for the reformulated systems. These schemes lead to decoupled linear equations with constant coefficients at each time step so that they can be implemented easily and very efficiently. We present ample numerical results to demonstrate the stability and accuracy of our SAV schemes.
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页码:1467 / 1487
页数:20
相关论文
共 63 条
[1]  
Caflisch RE(1999)Island dynamics and the level set method for epitaxial growth Appl. Math. Lett. 12 13-22
[2]  
Gyure MF(2012)A linear energy stable scheme for a thin film model without slope selection J. Sci. Comput. 52 546-562
[3]  
Merriman B(2014)A linear iteration algorithm for a second-order energy stable scheme for a thin film model without slope selection J. Sci. Comput. 59 574-601
[4]  
Osher SJ(1987)Origin of reflection high-energy electron-diffraction intensity oscillations during molecular-beam epitaxy: a computational modeling approach Phys. Rev. Lett. 58 2235-1663
[5]  
Ratsch C(1993)The global dynamics of discrete semilinear parabolic equations SIAM J. Numer. Anal. 30 1622-2830
[6]  
Vvedensky DD(1998)Level-set methods for the simulation of epitaxial phenomena Phys. Rev. E 58 R6927-282
[7]  
Zinck JJ(1989)Dynamic Monte Carlo with a proper energy barrier: surface diffusion and two-dimensional domain ordering J. Chem. Phys. 90 2824-451
[8]  
Chen W(1997)Origins of scale invariance in growth processes Adv. Phys. 46 139-1414
[9]  
Conde S(2004)Epitaxial growth without slope selection: energetics, coarsening, and dynamic scaling J. Nonlinear Sci. 14 429-674
[10]  
Wang C(2000)Interfacial coarsening dynamics in epitaxial growth with slope selection Phys. Rev. E 61 6190-125