In this script, authors affirm a novel structure of tunnel FET in which a lightly doped channel region completely bounds the ultra-thin finger-like source region to enhance the tunneling probability with an increased tunneling interface area. TFETs have become common in power-constrained applications due to the minimal subthreshold swing (SS) and low OFF current (Ioff\documentclass[12pt]{minimal}
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\begin{document}$$I_\mathrm{{off}}$$\end{document}) with low ON-state driving current (Ion\documentclass[12pt]{minimal}
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\begin{document}$$I_\mathrm{{on}}$$\end{document}) and ambipolar conduction concerns. Decreasing device dimensions is becoming more crucial for protecting device linearity and reliability under varying manufacturing and environmental conditions. However, changes in ambient temperature (T) imply its efficiencies, such as linearity distortion, analogue, and high-frequency performance, which must be thoroughly investigated. The impactful analysis was carried out for manuscript for assuring analog/RF performance, linearity distortion, and reliability of F-shaped TFET. Extensive investigations have been performed to check device susceptibility towards temperature ranging from 250 to 400 K by using the 2D-TCAD tool. For this, various critical parameters like Ion\documentclass[12pt]{minimal}
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\begin{document}$$I_\mathrm{{on}}$$\end{document}, Iambi\documentclass[12pt]{minimal}
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\begin{document}$$I_\mathrm{{ambi}}$$\end{document}, SS, parasitic capacitances, threshold voltage (Vth\documentclass[12pt]{minimal}
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\begin{document}$$V_\mathrm{{th}}$$\end{document}), Ion/Ioff\documentclass[12pt]{minimal}
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\begin{document}$$I_\mathrm{{on}}/I_\mathrm{{off}}$$\end{document} ratio, transconductance (gm\documentclass[12pt]{minimal}
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\begin{document}$$g_{m}$$\end{document}), output transconductance (gds\documentclass[12pt]{minimal}
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\begin{document}$$g_\mathrm{{ds}}$$\end{document}), higher-order gm\documentclass[12pt]{minimal}
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\begin{document}$$g_{m3}$$\end{document}), intrinsic gain (IG), cut-off frequency (ft\documentclass[12pt]{minimal}
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\begin{document}$$f_{t}$$\end{document}), gain bandwidth product (GBP), transconductance generation factor (TGF), transit time (TT), transconductance frequency product (TFP), VIP2, VIP3, IIP3, IMD3 and 1-dB compression point have been investigated for temperature sensitivity analysis for the proposed device. Furthermore, reliability analysis is also performed, which shows that with a significant change in second harmonics, rising temperature is seen to be unfavorable for the SS, Iambi\documentclass[12pt]{minimal}
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\begin{document}$$I_\mathrm{{ambi}}$$\end{document} and Ion/Ioff\documentclass[12pt]{minimal}
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\begin{document}$$I_\mathrm{{on}}/I_\mathrm{{off}}$$\end{document} ratio.
