Localization of negatively charged excitons in GaAs/AlGaAs quantum wells

被引：0

作者：

O. V. Volkov

S. V. Tovstonog

I. V. Kukushkin

K. von Klitzing

K. Eberl

机构：

[1] Russian Academy of Sciences,Institute of Solid

[2] Max-Planck-Institut für Festkörperforschung,State Physics

来源：

Journal of Experimental and Theoretical Physics Letters | 1999年 / 70卷

关键词：

78.66.Fd; 71.35.Aa;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The localization of negatively charged excitons on isolated charged donors, located in a barrier at various fixed distances L from the heteroboundary, is investigated in isolated GaAs/AlGaAs quantum wells. The energy shift of the cyclotron replica in the emission spectra of a localized excitonic complex is studied as a function of L. It is shown that in undoped samples charged excitons localize on residual donors at distances L>350 Å on account of the formation of D− complexes at shorter distances. It is established that a cyclotron replica arises with the recombination of an excited state and not the ground state, as previously thought, of an excitonic complex.

引用

页码：595 / 601

页数：6

共 23 条

[1] Lampert M. A.(1950)undefined Phys. Rev. Lett. 1 450-undefined
[2] Volkov O. V.(1997)undefined JETP Lett. 66 766-undefined
[3] Zhitomirskii V. I.(1998)undefined JETP Lett. 68 236-undefined
[4] Kukushkin I. V.(1996)undefined Phys. Rev. B 53 12593-undefined
[5] Volkov O. V.(1956)undefined Phys. Rev. 102 1030-undefined
[6] Kukushkin I. V.(1988)undefined Phys. Rev. B 38 6015-undefined
[7] von Klitzing K.(1997)undefined Phys. Rev. B 56 7541-undefined
[8] Finkelstein G.(1997)undefined Phys. Rev. B 56 15185-undefined
[9] Shtrikman H.(1995)undefined Phys. Rev. B 52 7841-undefined
[10] Bar-Joseph I.(1995)undefined Phys. Rev. B 51 10709-undefined

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