Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates

被引：0

作者：

Huijie Li

Guijuan Zhao

Hongyuan Wei

Lianshan Wang

Zhen Chen

Shaoyan Yang

机构：

[1] Institute of Semiconductors,Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices

[2] Chinese Academy of Sciences,undefined

[3] University of Chinese Academy of Sciences,undefined

[4] LatticePower (Jiangxi) Corporation,undefined

来源：

Nanoscale Research Letters | 2016年 / 11卷

关键词：

Bare Glass; Epitaxial Relationship; Metal Indium; Bare Glass Substrate; Amorphous Glass Substrate;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The growth of well-aligned nanorods on amorphous substrates can pave the way to fabricate large-scale and low-cost devices. In this work, we successfully prepared vertically well-aligned c-axis InN nanorods on amorphous glass substrate by metal-organic chemical vapor deposition. The products formed directly on bare glass are randomly oriented without preferential growth direction. By inserting a GaN/Ti interlayer, the nanowire alignment can be greatly improved as indicated by scanning electron microscopy and X-ray diffraction.

引用

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