Effect of microwave irradiation on the resistance of Au-TiBx-Ge-Au-n-n+-n++-GaAs(InP) ohmic contacts

被引：0

作者：

A. E. Belyaev

A. V. Sachenko

N. S. Boltovets

V. N. Ivanov

R. V. Konakova

Ya. Ya. Kudryk

L. A. Matveeva

V. V. Milenin

S. V. Novitskii

V. N. Sheremet

机构：

[1] National Academy of Sciences of Ukraine,Lashkaryov Institute of Semiconductor Physics

[2] State Enterprise Research Institute “Orion”,undefined

来源：

Semiconductors | 2012年 / 46卷

关键词：

GaAs; Dislocation Density; Microwave Irradiation; Ohmic Contact; Contact Region;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Temperature dependences of the contact resistivity ρc of Au-TiBx-Ge-Au-n-n+-n++(GaAs)-InP ohmic contacts before and after short-term (10 s) microwave treatment have been studied both experimentally and theoretically. It is shown that ρc can decrease after microwave treatment in the entire temperature range of ρc measurements (100–400 K). Good agreement between the theoretical and experimental ρc(T) curves is attained and interpreted on the assumption that the dislocation density in the semiconductor near-surface region is varied as a result of microwave radiation.

引用

页码：541 / 544

页数：3

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