Effect of microwave irradiation on the resistance of Au-TiBx-Ge-Au-n-n+-n++-GaAs(InP) ohmic contacts

Temperature dependences of the contact resistivity ρc of Au-TiBx-Ge-Au-n-n+-n++(GaAs)-InP ohmic contacts before and after short-term (10 s) microwave treatment have been studied both experimentally and theoretically. It is shown that ρc can decrease after microwave treatment in the entire temperature range of ρc measurements (100–400 K). Good agreement between the theoretical and experimental ρc(T) curves is attained and interpreted on the assumption that the dislocation density in the semiconductor near-surface region is varied as a result of microwave radiation.