Comparison of flash-memory elements using materials based on graphene

被引：0
作者：
I. V. Antonova
I. A. Kotin
O. M. Orlov
S. F. Devyatova
机构：
[1] Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch
[2] Novosibirsk State University,undefined
[3] Novosibirsk State Technical University,undefined
[4] Scientific and Research Institute of Molecular Electronics,undefined
来源：
Technical Physics Letters | 2017年 / 43卷
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D O I：
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中图分类号：
学科分类号：
摘要：
Charge capture on flash-memory test structures with floating gates made of graphene (few-layer graphene) and its compounds (graphene oxide and partially fluorinated graphene) is investigated. A comparison of the memory window for different structures has shown the potential of using reduced graphene oxide, graphene with only a few layers, and fluorographene. For the first time, partially fluorinated graphene has been employed as a floating gate in flash-memory structures. Graphene-based materials are promising for 2D printing technologies and flexible electronics.
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页码：889 / 892
页数：3
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