Effects of electric potential on chemical-mechanical polishing of copper

被引：0
|
作者：
G. Helen Xu
Hong Liang
机构：
[1] University of Alaska Fairbanks,Department of Mechanical Engineering
来源：
Journal of Electronic Materials | 2002年 / 31卷
关键词：
Electric potential; Cu CMP; planarization;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of electric potential on the dissolution and polishing behavior of copper in acidic and alkaline media was investigated. The electromechanical polishing mechanism of copper is discussed based on removal rate of copper, pH of slurries, and surface morphology of polished copper. The most interesting phenomenon occurred in chemical-mechanical polishing (CMP) of copper with applied direct current (DC) voltage is the variation of pH during polishing. The dissolution experiments indicated that an acidic agent might have more hydrogen reduced with higher DC potential. The results demonstrated that the application of DC voltage is beneficial to improve planarization of copper polishing in an alkaline slurry.
引用
收藏
页码：272 / 277
页数：5
相关论文
共 50 条
  • [41] Effect of organic acids on copper chemical mechanical polishing
    Wu, Yung-Fu
    Tsai, Tzu-Hsuan
    MICROELECTRONIC ENGINEERING, 2007, 84 (12) : 2790 - 2798
  • [42] Tribo-electrochemical study of stainless steel surfaces during chemical-mechanical polishing
    Totolin, Vladimir
    Goecerler, Hakan
    Ripoll, Manel Rodriguez
    Jech, Martin
    LUBRICATION SCIENCE, 2016, 28 (06) : 363 - 380
  • [43] Improved polysilicon surface-micromachined micromirror devices using chemical-mechanical polishing
    Hetherington, DL
    Sniegowski, JJ
    PHOTONICS FOR SPACE ENVIRONMENTS VI, 1998, 3440 : 148 - 153
  • [44] Analyzing the effects of pad asperity on chemical mechanical polishing of copper thin film wafer
    Le Nam Quoc Huy
    Lin, Chun-Yu
    Chen, Chao-Chang A.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (07)
  • [45] A chemical mechanical polishing model incorporating both the chemical and mechanical effects
    Qin, K
    Moudgil, B
    Park, CW
    THIN SOLID FILMS, 2004, 446 (02) : 277 - 286
  • [46] Pad Deflection-Based Model of Chemical-Mechanical Polishing for Use in CAD IC Layout
    Comes, Ryan B.
    Terrell, Elon J.
    Higgs, C. Fred, III
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2010, 23 (01) : 121 - 131
  • [47] Nano-scratch evaluations of copper chemical mechanical polishing
    Fu, Wei-En
    Chen, Chao-Chang A.
    Huang, Kuo-Wei
    Chang, Yong-Qing
    Lin, Tzeng-Yow
    Chang, Chi-Sheng
    Chen, Jay-San
    THIN SOLID FILMS, 2013, 529 : 306 - 311
  • [48] Functions of Trilon® P as a polyamine in copper chemical mechanical polishing
    Jiang, Liang
    Lan, Yongqing
    He, Yongyong
    Li, Yuzhuo
    Luo, Jianbin
    APPLIED SURFACE SCIENCE, 2014, 288 : 265 - 274
  • [49] Material Removal Mechanism of Copper CMP from a Chemical-Mechanical Synergy Perspective
    Li, Jing
    Liu, Yuhong
    Lu, Xinchun
    Luo, Jianbin
    Dai, Yuanjing
    TRIBOLOGY LETTERS, 2013, 49 (01) : 11 - 19
  • [50] Noise properties of high-Tc superconducting flux transformers fabricated using chemical-mechanical polishing
    Chukharkin, M.
    Kalabukhov, A.
    Schneiderman, J. F.
    Oisjoen, F.
    Snigirev, O.
    Lai, Z.
    Winkler, D.
    APPLIED PHYSICS LETTERS, 2012, 101 (04)
12345