Effects of electric potential on chemical-mechanical polishing of copper

被引:0
|
作者
G. Helen Xu
Hong Liang
机构
[1] University of Alaska Fairbanks,Department of Mechanical Engineering
来源
Journal of Electronic Materials | 2002年 / 31卷
关键词
Electric potential; Cu CMP; planarization;
D O I
暂无
中图分类号
学科分类号
摘要
The effect of electric potential on the dissolution and polishing behavior of copper in acidic and alkaline media was investigated. The electromechanical polishing mechanism of copper is discussed based on removal rate of copper, pH of slurries, and surface morphology of polished copper. The most interesting phenomenon occurred in chemical-mechanical polishing (CMP) of copper with applied direct current (DC) voltage is the variation of pH during polishing. The dissolution experiments indicated that an acidic agent might have more hydrogen reduced with higher DC potential. The results demonstrated that the application of DC voltage is beneficial to improve planarization of copper polishing in an alkaline slurry.
引用
收藏
页码:272 / 277
页数:5
相关论文
共 50 条
  • [31] Breaking-In a Pad for Scratch-Free, Cu Chemical-Mechanical Polishing
    Eusner, T.
    Saka, N.
    Chun, J. -H.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (04) : H379 - H389
  • [32] Kinetics of polishing friction for copper pits formation during copper chemical mechanical polishing
    Wang, Ying-Lang
    Chen, Kei-Wei
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (07) : H589 - H595
  • [33] Effects of organic compounds rich in phosphate functional groups as multifunctional inhibitors on copper film chemical-mechanical polishing properties: Combined experiment and theoretical calculation
    Dong, Changxin
    Niu, Xinhuan
    He, Chao
    Li, Xinjie
    Wu, Zheng
    Li, Jiahui
    Hu, Bin
    Shi, Yunhui
    Cheng, Jiabao
    Luan, Xiaodong
    TRIBOLOGY INTERNATIONAL, 2025, 201
  • [34] The mechanical effect of soft pad on copper chemical mechanical polishing
    Liu, Pengzhan
    Nam, Yuna
    Lee, Seunghwan
    Kim, Eungchul
    Jeon, Sanghuck
    Park, Kihong
    Hong, Seokjun
    Kim, Taesung
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 155
  • [35] Effects of mixed inhibitors in copper chemical mechanical polishing at a low down pressure
    Gong, Hua
    Pan, Guoshun
    Gu, Zhonghua
    Luo, Guihai
    Luo, Haimei
    PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART J-JOURNAL OF ENGINEERING TRIBOLOGY, 2014, 228 (10) : 1180 - 1186
  • [36] Competitive effect between corrosion inhibitors in copper chemical mechanical polishing
    Zhang, Yongshun
    Jiang, Liang
    Li, Wenhui
    Qian, Linmao
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 161
  • [37] Breaking-In a Pad for Scratch-Free, Cu Chemical-Mechanical Polishing (CuCMP)
    Eusner, T.
    Saka, N.
    Chun, J. -H.
    CHEMICAL MECHANICAL POLISHING 11, 2010, 33 (10): : 115 - 136
  • [38] Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with different abrasives
    Zou, Chunli
    Pan, Guoshun
    Shi, Xiaolei
    Gong, Hua
    Zhou, Yan
    PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART J-JOURNAL OF ENGINEERING TRIBOLOGY, 2014, 228 (10) : 1144 - 1150
  • [39] An analytical investigation of pad wear caused by the conditioner in fixed abrasive chemical-mechanical polishing
    Nguyen, N. Y.
    Zhong, Z. W.
    Tian, Yebing
    INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY, 2015, 77 (5-8): : 897 - 905
  • [40] The Effect of Pad-Asperity Curvature on Material Removal Rate in Chemical-Mechanical Polishing
    Kim, Sanha
    Saka, Nannaji
    Chun, Jung-Hoon
    6TH CIRP INTERNATIONAL CONFERENCE ON HIGH PERFORMANCE CUTTING (HPC2014), 2014, 14 : 42 - 47