Effects of electric potential on chemical-mechanical polishing of copper

被引:0
|
作者
G. Helen Xu
Hong Liang
机构
[1] University of Alaska Fairbanks,Department of Mechanical Engineering
来源
Journal of Electronic Materials | 2002年 / 31卷
关键词
Electric potential; Cu CMP; planarization;
D O I
暂无
中图分类号
学科分类号
摘要
The effect of electric potential on the dissolution and polishing behavior of copper in acidic and alkaline media was investigated. The electromechanical polishing mechanism of copper is discussed based on removal rate of copper, pH of slurries, and surface morphology of polished copper. The most interesting phenomenon occurred in chemical-mechanical polishing (CMP) of copper with applied direct current (DC) voltage is the variation of pH during polishing. The dissolution experiments indicated that an acidic agent might have more hydrogen reduced with higher DC potential. The results demonstrated that the application of DC voltage is beneficial to improve planarization of copper polishing in an alkaline slurry.
引用
收藏
页码:272 / 277
页数:5
相关论文
共 50 条
  • [21] Control of microscratches in chemical-mechanical polishing process for shallow trench isolation
    Park, H
    Kim, KB
    Hong, CK
    Chung, UI
    Lee, MY
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (11): : 5849 - 5853
  • [22] Modeling the Chemical-Mechanical Synergy during Copper CMP
    Li, Jing
    Lu, Xinchun
    He, Yongyong
    Luo, Jianbin
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (02) : H197 - H202
  • [23] Kinetics model incorporating both the chemical and mechanical effects on material removal for copper chemical mechanical polishing
    Liu, Xiaoyan
    Liu, Yuling
    Liang, Yan
    Zhao, Zhiwen
    Gao, Baohong
    MICROELECTRONIC ENGINEERING, 2012, 91 : 19 - 23
  • [24] Environment friendly chemical mechanical polishing of copper
    Zhang, Zhenyu
    Cui, Junfeng
    Zhang, Jiabo
    Liu, Dongdong
    Yu, Zhijian
    Guo, Dongming
    APPLIED SURFACE SCIENCE, 2019, 467 : 5 - 11
  • [25] Study on Oxidant in Chemical Mechanical Polishing of Copper
    Xu, Rui
    Wang, Yongsheng
    Wang, Yipu
    Liu, Haixu
    Su, Jianxiu
    TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2020, 21 (06) : 580 - 586
  • [26] Cation Effect on Copper Chemical Mechanical Polishing
    Wang Liang-Yong
    Liu Bo
    Song Zhi-Tang
    Feng Song-Lin
    CHINESE PHYSICS LETTERS, 2009, 26 (02)
  • [27] Physically-based modeling of pad-asperity scale chemical-mechanical synergy in chemical mechanical polishing
    Wang, Lin
    Zhou, Ping
    Yan, Ying
    Kang, Renke
    Guo, Dongming
    TRIBOLOGY INTERNATIONAL, 2019, 138 (307-315) : 307 - 315
  • [28] Characterization of Pad-Wafer Contact Area and Distance in Chemical-Mechanical Polishing
    Schumacher-Haertwig, Henrik
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2023, 12 (07)
  • [29] Effect of Silicon Dioxide Hardness on Scratches in Interlevel Dielectric Chemical-Mechanical Polishing
    Kwon, Tae-Young
    Cho, Byoung-Jun
    Venktesh, R. Prasanna
    Ramachandran, Manivannan
    Kim, Hyuk-Min
    Hong, Chang-Ki
    Park, Jin-Goo
    TRIBOLOGY TRANSACTIONS, 2014, 57 (02) : 190 - 197
  • [30] Prognostics and Health Management of Wafer Chemical-Mechanical Polishing System using Autoencoder
    Lim, Kart-Leong
    Dutta, Rahul
    2021 IEEE INTERNATIONAL CONFERENCE ON PROGNOSTICS AND HEALTH MANAGEMENT (ICPHM), 2021,