InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

被引:0
作者
Zhenhua Li
Jiang Wu
Zhiming M Wang
Dongsheng Fan
Aqiang Guo
Shibing Li
Shui-Qing Yu
Omar Manasreh
Gregory J Salamo
机构
[1] University of Arkansas,Arkansas Institute For Nanoscale Materials Science and Engineering
[2] University of Arkansas,Department of Electrical Engineering
来源
Nanoscale Research Letters | / 5卷
关键词
Photoluminescence; Quantum well; High-index surfaces; Superluminescent diode; Atomic force microscopy;
D O I
暂无
中图分类号
学科分类号
摘要
The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100), (210), (311), and (731) substrates. A broad photoluminescence emission peak (~950 nm) with a full width at half maximum (FWHM) of 48 nm is obtained from the sample grown on (210) substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100) substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311) with FWHM = 7.8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications.
引用
收藏
相关论文
共 99 条
[1]  
Zhang ZY(2009)A p-type-doped quantum dot superluminescent LED with broadband and flat-topped emission spectra obtained by post-growth intermixing under a GaAs proximity cap Nanotechnology 20 55204-1262
[2]  
Jiang Q(2008)Design considerations for asymmetric multiple quantum well broad spectral width superluminescent diodes IEEE J. Quantum Electron 44 1256-503
[3]  
Luxmoore IJ(2007)1.3-μm quantum-dot multisection superluminescent diodes with extremely broad bandwidth IEEE Photon. Technol. Lett 19 501-989
[4]  
Hogg RA(2008)Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process Opt. Lett 33 1210-746
[5]  
Wang J(1990)Broader spectral width InGaAsP stacked active layer superluminescent diodes Appl. Phys. Lett 56 987-1595
[6]  
Hamp MJ(2008)Broadband near-IR double quantum-well heterostructure superluminescent diodes Quantum Electron 38 744-5
[7]  
Cassidy DT(2004)High performance quantum well intermixed superluminescent diodes Meas. Sci. Technol 15 1591-613
[8]  
Xin Y-C(2007)Effective-mass theory for coupled quantum dots grown on (11 N)-oriented substrates Chin. Phys 16 1-693
[9]  
Martinez A(2007)Influence of GaAs substrate orientation on InAs quantum dots: surface morphology, critical thickness, and optical properties Nanoscale Res. Lett 2 609-45
[10]  
Saiz T(2009)Effect of interfacial bonds on the morphology of InAs QDs grown on GaAs (311) B and (100) substrates Nanoscale Res. Lett 4 689-52