Development of a SCAR marker associated with salt tolerance in durum wheat (Triticum turgidum ssp. durum) from a semi-arid region

被引:0
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作者
Sang Heon Kim
Jae Yoon Kim
Dae Yeon Kim
Jin Seok Yoon
Woo Joo Jung
Inés Yacoubi
Yong Weon Seo
机构
[1] Korea University,Department of Biosystems and Biotechnology
[2] Korea University,Division of Biotechnology
[3] Centre of Biotechnology of Sfax,undefined
来源
Genes & Genomics | 2016年 / 38卷
关键词
Durum wheat; ssp. ; Salt tolerance; Semi-arid region; SCAR; SSR;
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摘要
Durum wheat (Triticum turgidum ssp. durum) is one of the main species of cultivated wheat. In arid and semi-arid areas, salinity stress reduces durum wheat productivity. This study used 26 durum wheat accessions from semi-arid regions in Tunisia to analyze plant tolerance to salt stress. Salt stress was experimentally applied by regularly submerging pots in NaCl solution. The salt tolerance trait index (STTI) and salt tolerance index (STI) of various growth parameters were used as criteria to select for salt tolerance. Analysis of genetic relationships was carried out to determine the genetic distance between durum wheat accessions. Based on simple sequence repeats analysis, a molecular marker for salt stress resistance in durum wheat was developed. Salt-treated plants had reduced morphological traits compared to control plants. Most STTIs in all genotypes were below 100 %. Based on STI, 8 accessions were found to be salt-resistant, 16 were salt-moderate, two were salt-susceptible. Analysis of the genetic relationships among 28 Tunisian durum wheat accessions revealed that landraces of the same nominal type are closely related. Of the 94 SSR primers investigated, three were selected and used to design sequence characterized amplified region (SCAR) primers. One SCAR primer pair, KUCMB_Xgwm403_2, produced a 207 bp band that was present in salt-resistant durum wheat lines but absent in salt-susceptible lines. The results suggest that KUCMB_Xgwm403_2 could be a potential genetic tag for salt-tolerant durum wheats.
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页码:939 / 948
页数:9
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