New type X-ray mask fabricated using inductively coupled plasma deepetching

被引：0

作者：

D. Chen

W. Lei

S. Wang

C. Li

X. Guo

H. Mao

D. Zhang

F. Yi

机构：

[1] The State Laboratory of Micro/Nano Fabrication Technology,

[2] Research Institute of Micro/Nanometer Science and Technology,undefined

[3] Shanghai Jiao Tong University,undefined

[4] Shanghai,undefined

[5] 200030,undefined

[6] China,undefined

[7] Institute of Microelectronics,undefined

[8] Peking University,undefined

[9] Beijing 100871,undefined

[10] China,undefined

[11] Synchrotron Radiation Laboratory,undefined

[12] Institute of High Energy Physics,undefined

[13] Beijing 100039,undefined

[14] China,undefined

来源：

Microsystem Technologies | 2001年 / 7卷

关键词：

Silicon; Microstructure; Fabrication Process; Inductively Couple Plasma; Couple Plasma;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The fabrication of X-ray masks is a critical and challenging process in LIGA technique. As inductively coupled plasma (ICP) deepetching appears to be the most suitable source for deep silicon etching, we fabricated a new type X-ray mask using this technique. In comparison with other types of X-ray masks, the mask we fabricated has the advantages of its low cost and its simple fabrication process. Desired microstructures have also been fabricated using this new type X-ray mask in LIGA technique.

引用

页码：71 / 74

页数：3

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