3.3 THz Quantum Cascade Laser Based on a Three GaAs/AlGaAs Quantum-Well Active Module with an Operating Temperature above 120 K

被引：0
作者：
R. A. Khabibullin
K. V. Maremyanin
D. S. Ponomarev
R. R. Galiev
A. A. Zaycev
A. I. Danilov
I. S. Vasil’evskii
A. N. Vinichenko
A. N. Klochkov
A. A. Afonenko
D. V. Ushakov
S. V. Morozov
V. I. Gavrilenko
机构：
[1] V. G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics,
[2] Russian Academy of Sciences,undefined
[3] Ioffe Institute,undefined
[4] Institute for Physics of Microstructures,undefined
[5] Russian Academy of Sciences,undefined
[6] Lobachevsky State University of Nizhny Novgorod,undefined
[7] National Research University of Electronic Technology,undefined
[8] JSC Polyus Research Institute of M. F. Stelmakh,undefined
[9] National Research Nuclear University MEPhI,undefined
[10] Belarusian State University,undefined
来源：
Semiconductors | 2022年 / 56卷
关键词：
quantum cascade laser; terahertz range; quantum well; molecular-beam epitaxy;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：71 / 77
页数：6
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