Shallow p-n junctions formed in silicon using pulsed photon annealing

Shallow and ultrashallow p-n junctions were formed in Si by stimulated diffusion of P from phosphosilicate glass and B from borosilicate glass under pulsed photon annealing. Electrical, photoelectric, and optical properties of these junctions were investigated. Special features of stimulated diffusion of P and B in surface layers of Si under pulsed photon annealing were revealed. The obtained results are discussed in terms of kick-out, pair vacancy-interstitial, and dissociative diffusion mechanisms. The features of the dopant concentration profiles are explained in terms of the vacancy-interstitial mechanism and the stimulated diffusion model with allowance made for the time dependence of the dopant surface concentration and the concentration dependence of the diffusivity.