Effect of indium distribution on optical properties in InGaAs/GaAs quantum wells

被引：1

作者：

Jia G. ^{[1
]}

Yao J. ^{[2
]}

Shu Y. ^{[2
]}

Xin X. ^{[2
]}

Pi B. ^{[2
]}

机构：

[1] Tianjin Institute of Urban Construction, Tianjin

[2] The Key Lab of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials, TEDA Applied Physics School, Nankai University, Tianjin

来源：

Frontiers of Optoelectronics in China | 2009年 / 2卷 / 1期

基金：

中国国家自然科学基金;

关键词：

diffusion; InGaAs/GaAs; quantum well (QW); surface segregation;

D O I：

10.1007/s12200-008-0047-8

中图分类号：

学科分类号：

摘要：

The effect of In surface segregation and diffusion on the transition energy of an InGaAs/GaAs strained quantum well (QW) was investigated theoretically. Diffusion equations and the Schrödinger equation on the InGaAs/GaAs QW were solved numerically. The energy shifts under different diffusion lengths were simulated. When the width of QW, L, is larger than 5 nm, the change rate of the transition energy is very minimal at the initial stage of the annealing process for wide QW, and the transition energy has a rapid blue shift with an increase of the diffusion length. When L is smaller than 5 nm, the transition energy is very sensitive to the diffusion length. The change rate of transition energy increases with a decrease in QW width. © 2008 Higher Education Press and Springer-Verlag GmbH.

引用

页码：108 / 112

页数：4

共 20 条

[1]

Lam Y., Loehr J.P., Singh J., Comparison of steady state and transient characteristics of lattice matched and strained InGaAs-AlGaAs (on GaAs) and InGaAs-AlInAs (on InP) quantum well lasers, IEEE Journal of Quantum Electronics, 28, 5, pp. 1248-1260, (1992)

[2]

Suemune I., Coldren L.A., Yamanishi M., Et al., Extremely wide modulation bandwidth in a low threshold current strained quantum well laser, Applied Physics Letters, 53, 15, pp. 1378-1380, (1988)

[3]

Chan M.C.Y., Surya C., Wai P.K.A., The effects of interdiffusion on the subbands in GaxIn1-xN0.04As0.96/GaAs quantum well for 1.3 and 1.55 μm operation wavelengths, Journal of Applied Physics, 90, 1, pp. 197-201, (2001)

[4]

Muraki K., Fukatsu S., Shiraki Y., Et al., Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells, Applied Physics Letters, 61, 5, pp. 557-559, (1992)

[5]

Chattopadhyay K., Aubel J., Sundaram S., Et al., Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs, Journal of Applied Physics, 81, 8, pp. 3601-3606, (1997)

[6]

Yu H., Roberts C., Murray R., Influence of indium segregation on the emission from InGaAs/GaAs quantum wells, Applied Physics Letters, 66, 17, pp. 2253-2255, (1995)

[7]

Martini S., Quivy A.A., Tabata A., Et al., Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates, Journal of Vacuum Science & Technology B, 18, 4, pp. 1991-1996, (2000)

[8]

Moison J.M., Guille C., Houzay F., Et al., Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures, Physical Review B, 40, 9, pp. 6149-6162, (1989)

[9]

Iyer S.S., Tsang J.C., Copel M.W., Et al., Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering, Applied Physics Letters, 54, 3, pp. 219-221, (1989)

[10]

Fukatsu S., Fujita K., Yaguchi H., Et al., Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth, Applied Physics Letters, 59, 17, pp. 2103-2105, (1991)

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