Novel fast atom beam (FAB) processes for fabricating functional nanostructures on three-dimensional microstructures

被引：0

作者：

M. Hatakeyama

S. Tanaka

K. Ichiki

Y. Toma

M. Nakao

Y. Hatamura

机构：

[1] Micro-fabrication Lab.,

[2] Ebara Research Co.,undefined

[3] Ltd.,undefined

[4] 4-2-1 Honfujisawa,undefined

[5] Fujisawa-shi,undefined

[6] Kanagawa-ken,undefined

[7] 251 Japan,undefined

[8] Department of Engineering Synthesis,undefined

[9] University of Tokyo,undefined

[10] 7-3-1 Hongo,undefined

[11] Bunkyo-ku,undefined

[12] Tokyo,undefined

[13] 113 Japan,undefined

来源：

Microsystem Technologies | 1997年 / 3卷

关键词：

Microstructure; GaAs; Manufacturing Process; Local Point; Atom Beam;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have developed four manufacturing processes that use a fast atom beam (FAB) for fabricating functional nanostructures on three-dimensional (3-D) microstructures. Such fabrication involves two steps: (1) producing the 3-D microstructure; and (2) producing the nanometer-size functional structures at a local point on this microstructure. The FAB methods that we developed for the first step are the separated (non-contact) mask FAB (SM-FAB) and moving mask FAB (MM-FAB), and those for the second step are the nanometer-motion moving mask FAB (NMM-FAB) and electron-beam deposition-pattern FAB (ED-FAB). We previously demonstrated the capability of the SM-FAB, by producing a multi-faced microstructure, a micro gojyunoto (named after an old Japanese temple tower). In this study, we describe and demonstrate the capability of the MM-FAB, by producing multiple, multi-curved and sloped structure, a diffraction grating structure; the NMM-FAB, by producing ultra-fine stairs, 30 nm wide and 30 nm high; and the ED-FAB, by producing a GaAs line structure, 55.3 nm wide and 13.6 nm high. These results show that these FAB methods are effective in producing 3-D microstructures and nano-structures. Combinations of these methods will make it possible to produce functional nanostructures on 3-D microstructures.

引用

页码：112 / 116

页数：4