Memristive devices based on mass printed organic resistive switching layers

被引：0
作者：
Jörg Strutwolf
Yong Chen
Johann Ullrich
Martin Dehnert
Arved C. Hübler
机构：
[1] Chemnitz University of Technology,Institute for Print and Media Technology
[2] Chemnitz University of Technology,Institute of Physics
来源：
Applied Physics A | 2021年 / 127卷
关键词：
Resistive switching; Memristor; ReRAM; Organic polymer blend; Printed electronics; Flexible electronics; Roll-to-roll printing; Flexographic printing;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Resistive random-access memory is a candidate for next-generation non-volatile memory architectures. In this study, we use flexographic roll-to-roll printing technology for deposition of the resistive layer, a printing method that allows fast and cost-effective fabrication to create non-volatile resistive memory devices. Metal-free organic polymers blends composed of poly(methyl methacrylate) (PMMA) and a surplus of poly(vinyl alcohol) (PVA) serve as the active layer. Microscopic studies of the roll-to-roll printed layers show circular domains of PMMA embedded in PVA. The influence of the PMMA content in the polymer blend is investigated with respect to the performance and reliability of the resistive memory cells. Electrical characterization reveals a retention time of at least eleven days, a Roff/Ron ratio of approx. two orders and write/erase voltages of + 1/−2 V.
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