Formation of a transition layer during heteroepitaxy of III-V compound semiconductors in gas-phase epitaxy systems

被引：0

作者：

Vilisova M.D. ^{[1
]}

Ivonin I.V. ^{[1
]}

Korableva T.V. ^{[1
]}

Lavrent'eva L.G. ^{[1
]}

Lukash V.S. ^{[1
]}

Subach S.V. ^{[1
]}

Shulepov I.T. ^{[1
]}

Yakubenya M.P. ^{[1
]}

机构：

[1] Tomsk State University, Tomsk

来源：

Russian Physics Journal | 1999年 / 42卷 / 1期

关键词：

Transition Layer; Auger Electron Spectroscopy; GaAs Substrate; Electrophysical Property; Indium Phosphide;

D O I：

10.1007/BF02508239

中图分类号：

学科分类号：

摘要：

It is known that during gas-phase epitaxy of InP and GaAs the region of the film close to the heteroboundary is formed with altered phase, structural, and electrophysical properties. The main cause for this is formation of a transition layer due to a change in the growth mechanism (transition from nucleational to layer-step growth) and the structure of the growing surface (height and density of growth steps). © 1999 Kluwer Academic/Plenum Publishers.

引用

页码：17 / 21

页数：4