Topological bound states

被引:0
|
作者
A. A. Gorbatsevich
M. N. Zhuravlev
机构
[1] Russian Academy of Sciences,St. Petersburg Institute of Physics and Technology
[2] Moscow State Institute of Electronic Engineering (Technical University),undefined
来源
JETP Letters | 2009年 / 90卷
关键词
Branch Point; JETP Letter; Atomic Chain; Site Energy; Quantum Ring;
D O I
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学科分类号
摘要
In the tight binding approximation, it has been shown that a peculiar type of electronic states localized near the topology change point exists in branching molecules and quantum conductors. Bound states of this type exist both below and above the allowed band, i.e., for both electrons and holes; this property fundamentally differentiates these states from the bound states formed in the minimum of the potential energy. The damping decrement of the wavefunction is independent of the band parameters and is an invariant determined by the characteristic of topology. The tunnel interaction between the topological bound states significantly determines the change in the electronic spectrum of the molecular systems in configuration transitions.
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页码:582 / 586
页数:4
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