Characteristics of Textured Ce-Zr Mixed-Oxide Films as Buffer Layer for YBCO Coated Conductors

Single- and multi-layer (Ce1 − xZrx)O2 films (0 ≤ x ≤ 0.84) on Si (100) and polycrystalline Ni substrates were prepared using RF and DC magnetron co-sputtering. XRD of φ scan analysis showed that all (Ce1 − xZrx)O2 films were biaxially oriented with the c-axis perpendicular to the plane of the film. During sputtering, DC power to the Zr target was fixed at 200 W, while RF power to the Ce target was set at 30 W, 50 W, or 100 W. As-deposited ZrO2 film was amorphous and was crystallized by post-annealing. However, as-deposited (Ce1 − xZrx)O2 films were crystalline even when grown at room temperature and the structures of films were cubic or tetragonal depending on the Ce ion incorporation. It was found that multilayered CeO2/(Ce1 − xZrx)O2/CeO2 films could be deposited with a continuous compositional gradient in a sputtering batch. This layered CeO2/CZO/CeO2 structure can maintain its original texture after 800°C annealing and is therefore suitable for subsequent YBCO film growth. Furthermore, Ni diffusion is effectively blocked by the buffer layers just like the YSZ currently used in coated conductor fabrication.