Specificities of light-induced relaxation of metastable defects in amorphous hydrogenated silicon

被引：0

作者：

I. A. Kurova

N. N. Ormont

机构：

[1] Moscow State University,Department of Semiconductor Physics

来源：

Moscow University Physics Bulletin | 2009年 / 64卷

关键词：

hydrogenated amorphous silicon (a-Si:H); photoinduced metastable defects; photoinduced relaxation; stretched-exponential relaxation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The thermal relaxation kinetics of light-induced metastable defects in a-Si:H was studied prior to and after partial relaxation in the dark and in a dim light. The film lighting was found to change the relaxation rate of the defects and their distribution in relaxation time. This was demonstrated to be due to the concurrent light-induced relaxation and formation of the defects.

引用

页码：58 / 61

页数：3