Growth of AlGaN/GaN heterostructures with a two-dimensional electron gas on AlN/Al2O3 substrates

被引：7

作者：

Malin T.V. ^{[1
]}

Mansurov V.G. ^{[1
]}

Gilinskii A.M. ^{[1
]}

Protasov D.Y. ^{[1
]}

Kozhukhov A.S. ^{[1
]}

Vasilenko A.P. ^{[1
]}

Zhuravlev K.S. ^{[1
]}

机构：

[1] Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090

来源：

Malin, T. V. (mal-tv@thermo.isp.nsc.ru) | 1600年 / Allerton Press Incorporation卷 / 49期

基金：

俄罗斯基础研究基金会;

关键词：

AlGaN/GaN; AlN/Al[!sub]2[!/sub]O[!sub]3[!/sub] substrate; ammonia molecular beam epitaxy; high electron mobility GaN transistors; two-dimensional electron gas;

D O I：

10.3103/S8756699013050026

中图分类号：

学科分类号：

摘要：

The possibility of using AlN/Al2O3 substrates to grow AlGaN/GaN hetero-epitaxial structures with a two-dimensional electron gas is studied. A method of calibrating the temperature of the substrates by measuring the thermal radiation spectrum is proposed. Differences between AlN/Al2O3 substrates that lead to differences in the electrophysical parameters of the grown structures are determined. AlN/Al2O3 substrates were used to grow AlGaN/GaN samples with a two-dimensional electron gas mobility in excess of 1300 cm2/(V · s) at an electron concentration in the channel higher than 1013 cm-2. © 2013 Allerton Press, Inc.

引用

页码：429 / 433

页数：4

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