Advantages of Blue InGaN Light-Emitting Diodes with a Mix of AlGaN and InGaN Quantum Barriers

被引：0
作者：
Si-Ming Zeng
Guang-Han Fan
Shu-Wen Zheng
机构：
[1] South China Normal University,Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology
[2] Guangdong University of Technology,Experimental Teaching Center
来源：
Journal of Electronic Materials | 2015年 / 44卷
关键词：
Light-emitting diodes; InGaN quantum barriers; AlGaN quantum barriers; efficiency droop;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In this study, a new design of quantum barriers has been investigated numerically with the purpose of improving the optical performance of blue InGaN light-emitting diodes (LEDs). Through analysis of energy band diagrams, carrier concentrations, carrier current densities, Auger recombination rates, and radiative recombination rates, we obtain simulation results showing that the proposed structure with a mix of AlGaN and InGaN quantum barriers can significantly improve the light output power and internal quantum efficiency (IQE), being mainly attributed to successful enhancement of the hole injection efficiency and suppression of the electron leakage current. Moreover, the efficiency droop of the LEDs is markedly improved by using the newly designed structure.
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页码：3253 / 3258
页数：5
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