Annealing and microstructural characterization of tin-oxide based thick film resistors

被引：3

作者：

Anis Rahman K.M. ^{[1
,4
]}

Durning C.J. ^{[1
]}

Schneider S.C. ^{[2
]}

Seitz M.A. ^{[2
]}

Chiou W.A. ^{[3
]}

机构：

[1] Dept. of Chem. Eng./Appl. Chemistry, Columbia University, New York

[2] Dept. of Elec./Computer Engineering, Marquette University, Milwaukee

[3] Dept. of Mat. Sci. and Engineering, Northwestern University, Evanston

[4] Hummelstown, PA 17036

来源：

Journal of Electroceramics | 2002年 / 9卷 / 02期

关键词：

Annealing microstructure; Ionic diffusion; Thick-film resistor; Tin-oxide; Variable-range hopping;

D O I：

10.1023/A:1022858523031

中图分类号：

学科分类号：

摘要：

The sheet resistance of tin oxide based thick-film resistors exhibits two regions of temperature-dependence, described by hopping (23°C-200°C) and diffusion mechanisms (200°C-350°C), respectively. Annealing these samples causes the sheet resistance to increase in both regions. In the post-annealed samples, the hopping conduction range is extended by 50°C (23°C-250°C) while the hopping parameter, T0, is decreased by more than 50%. The activation energy of diffusion (0.60 eV) is the same for both pre- and post annealed samples, but the magnitude of resistance in the diffusion controlled region is increased significantly as a result of annealing. These changes are explained in terms of a net decrease in the concentration of tin ions in the glass matrix. From a careful microstructural study it was found that a conduction path composed of tin-oxide grains or their clusters in contact with each other does not exist in the present system. HREM micrographs showed the presence of nanocrystalline tin-oxide particles in the glass phase separating the tin-oxide grain clusters. Estimated average separation between the nanocrystals in 4 nm, consistent with a variable-range hopping conduction via the dissolved tin ions in the glass matrix.

引用

页码：137 / 150

页数：13

共 29 条

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