Design of a wideband low-power continuous-time ΣΔ modulator in 90 nm CMOS technology

被引：0

作者：

Fang Chen

Till Kuendiger

Shervin Erfani

Majid Ahmadi

机构：

[1] University of Windsor,Department of Electrical and Computer Engineering

[2] Carleton University,Department of Electronics

来源：

Analog Integrated Circuits and Signal Processing | 2008年 / 54卷

关键词：

Continuous-time; Sigma-delta modulator; Analog-to-digital converter; Wideband; Low power; 90nm CMOS;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The design of a wideband low-power continuous-time (CT) sigma-delta modulator (ΣΔM) is presented. At system level, an improved direct design method is used which allows direct design of the modulator in continuous-time domain. The modulator employs a low-latency flash quantizer to minimize excess loop delay. Digital-to-analog (DAC) trimming technique is used to correct the quantizer offset error, which permits minimum-sized transistors to be used for fast and low-power operation. The modulator is designed in 90 nm CMOS process with single 1.0-V power supply. It achieves a dynamic range (DR) of 75 dB and a signal-to-noise-and-distortion-ratio (SNDR) of 70 dB in a 25 MHz signal bandwidth with 16.4 mW power dissipation.

引用

页码：187 / 199

页数：12