Optical properties of indium nitride powder and films

被引：3
|
作者：
Mudryi A.V. [1 ]
Ivanyukovich A.V. [1 ]
Korotkii A.V. [1 ]
Emtsev V.V. [2 ]
Yakushev M.V. [3 ]
机构：
[1] Institute of Solid State and Semiconductor Physics, National Academy of Sciences of Belarus, Minsk 220072
[2] A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg
[3] Strathclyde University, Glasgow
来源：
Journal of Applied Spectroscopy | 2006年 / 73卷 / 1期
关键词：
Absorption; Bandgap; Indium nitride; Luminescence; Powders; Thin film;
D O I：
10.1007/s10812-006-0041-0
中图分类号：
学科分类号：
摘要：
Using photoluminescence and transmission measurements, we have studied the optical properties of indium nitride powder and thin films grown by molecular beam epitaxy. The bandgap for InN powder with electron concentration ∼4·1019 cm-3 was 0.94 eV, and for InN films with electron concentrations ∼1018 cm-3 it was 0.7 eV. We have established that when the electron concentration is increased to 8•1019 cm-3, the bandgap of InN increases to 1.0 eV. The change in the bandgap as a function of the concentration is due to the appearance of the Burstein-Moss effect. ©2006 Springer Science+Business Media, Inc.
引用
收藏
页码：95 / 98
页数：3
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