Optical properties of indium nitride powder and films

被引：3
|
作者：
Mudryi A.V. [1 ]
Ivanyukovich A.V. [1 ]
Korotkii A.V. [1 ]
Emtsev V.V. [2 ]
Yakushev M.V. [3 ]
机构：
[1] Institute of Solid State and Semiconductor Physics, National Academy of Sciences of Belarus, Minsk 220072
[2] A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg
[3] Strathclyde University, Glasgow
来源：
Journal of Applied Spectroscopy | 2006年 / 73卷 / 1期
关键词：
Absorption; Bandgap; Indium nitride; Luminescence; Powders; Thin film;
D O I：
10.1007/s10812-006-0041-0
中图分类号：
学科分类号：
摘要：
Using photoluminescence and transmission measurements, we have studied the optical properties of indium nitride powder and thin films grown by molecular beam epitaxy. The bandgap for InN powder with electron concentration ∼4·1019 cm-3 was 0.94 eV, and for InN films with electron concentrations ∼1018 cm-3 it was 0.7 eV. We have established that when the electron concentration is increased to 8•1019 cm-3, the bandgap of InN increases to 1.0 eV. The change in the bandgap as a function of the concentration is due to the appearance of the Burstein-Moss effect. ©2006 Springer Science+Business Media, Inc.
引用
收藏
页码：95 / 98
页数：3
相关论文
共 50 条
  • [1] OPTICAL-PROPERTIES OF INDIUM NITRIDE FILMS
    TYAGAI, VA
    EVSTIGNEEV, AM
    KRASIKO, AN
    ANDREEVA, AF
    MALAKHOV, VY
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (11): : 1257 - 1259
  • [2] Optical properties of reactively sputtered indium nitride thin films
    Shamrell, RT
    Parman, C
    OPTICAL MATERIALS, 1999, 13 (03) : 289 - 292
  • [3] Structural, optical and electrical properties of indium nitride polycrystalline films
    da Silva, M. V. S.
    David, D. G. F.
    Pepe, I.
    Ferreira da Silva, A.
    de Almeida, J. S.
    Gazoto, A. L.
    dos Santos, A. O.
    Cardoso, L. P.
    Meneses, E. A.
    Graybill, D. L.
    Mertes, K. M.
    THIN SOLID FILMS, 2012, 520 (15) : 4848 - 4852
  • [4] Optical properties of amorphous indium nitride films and their electrochromic and photodarkening effects
    Ohkubo, M
    Nonomura, S
    Watanabe, H
    Gotoh, T
    Yamamoto, K
    Nitta, S
    APPLIED SURFACE SCIENCE, 1997, 113 : 476 - 479
  • [5] PHYSICAL PROPERTIES OF INDIUM NITRIDE FILMS.
    Samsonov, G.V.
    Andreeva, A.F.
    Science of Sintering, 1980, 12 (03) : 155 - 162
  • [6] OPTICAL-PROPERTIES AND MICROSTRUCTURE OF REACTIVELY SPUTTERED INDIUM NITRIDE THIN-FILMS
    SULLIVAN, BT
    PARSONS, RR
    WESTRA, KL
    BRETT, MJ
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) : 4144 - 4149
  • [7] Optical properties of indium nitride in vacuum ultraviolet region
    Guo, QX
    Ogawa, H
    Yoshida, A
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1996, 79 : 9 - 12
  • [8] Indium nitride from indium iodide at low temperatures: synthesis and their optical properties
    Wu, CZ
    Li, TW
    Lei, LY
    Hu, SQ
    Liu, Y
    Xie, Y
    NEW JOURNAL OF CHEMISTRY, 2005, 29 (12) : 1610 - 1615
  • [9] Growth and properties of Indium nitride thin films and InN nanostructures
    Briot, O
    Ruffenach, S
    Gil, B
    2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS), 2005, : 839 - 840
  • [10] The effects of cap layers on electrical properties of indium nitride films
    Liu, Wei
    Tan, Rayson Jen Ngee
    Soh, Chew Beng
    Chua, Soo Jin
    APPLIED PHYSICS LETTERS, 2010, 97 (04)
12345