Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature

被引：0
|
作者：
Mohamed Benyoucef
Verena Zuerbig
Johann Peter Reithmaier
Tim Kroh
Andreas W Schell
Thomas Aichele
Oliver Benson
机构：
[1] CINSaT,Institute of Nanostructure Technologies and Analytics (INA)
[2] University of Kassel,undefined
[3] Nano-Optik,undefined
[4] Humboldt-Universität zu Berlin,undefined
来源：
Nanoscale Research Letters | / 7卷
关键词：
III-V semiconductors; Quantum dots; Droplet epitaxy; Single-photon emission; Radiative lifetime; 87.57.uh; 78.67.Hc; 78.55.-m; 42.50.-p;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy exhibits sharp excitonic emissions with lifetimes ranging from 0.7 to 1.1 ns. The coherence properties of the emitted photons are investigated by measuring the first-order field correlation function.
引用
收藏
相关论文
共 50 条
  • [21] Single-Photon Emission from InAs/AlGaAs Quantum Dots
    M. V. Rakhlin
    K. G. Belyaev
    G. V. Klimko
    I. S. Mukhin
    S. V. Ivanov
    A. A. Toropov
    Physics of the Solid State, 2018, 60 : 691 - 694
  • [22] Single-photon emission from single quantum dots in a hybrid pillar microcavity
    Yamaguchi, Takao
    Tawara, Takehiko
    Kamada, Hidehiko
    Gotoh, Hideki
    Okamoto, Hiroshi
    Nakano, Hidetoshi
    Mikami, Osamu
    APPLIED PHYSICS LETTERS, 2008, 92 (08)
  • [23] Single photon emission from individual GaAs quantum dots
    Hours, J
    Varoutsis, S
    Gallart, M
    Bloch, J
    Robert-Philip, I
    Cavanna, A
    Abram, I
    Laruelle, F
    Gérard, JM
    APPLIED PHYSICS LETTERS, 2003, 82 (14) : 2206 - 2208
  • [24] Multiexcitonic emission from single elongated InGaAs/GaAs quantum dots
    Dusanowski, L.
    Sek, G.
    Musial, A.
    Podemski, P.
    Misiewicz, J.
    Loeffler, A.
    Hoefling, S.
    Reitzenstein, S.
    Forchel, A.
    JOURNAL OF APPLIED PHYSICS, 2012, 111 (06)
  • [25] A High-Temperature Single-Photon Source from Nanowire Quantum Dots
    Tribu, Adrien
    Sallen, Gregory
    Aichele, Thomas
    Andre, Regis
    Poizat, Jean-Philippe
    Bougerol, Catherine
    Tatarenko, Serge
    Kheng, Kuntheak
    NANO LETTERS, 2008, 8 (12) : 4326 - 4329
  • [26] Single-photon and photon pair emission from individual (In,Ga)As quantum dots
    Ulrich, SM
    Benyoucef, M
    Michler, P
    Wiersig, J
    Baer, N
    Gartner, P
    Jahnke, F
    Schwab, M
    Kurtze, H
    Oulton, R
    Bayer, M
    Fafard, S
    Wasilewski, Z
    Forchel, A
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2005, 772 : 661 - 664
  • [27] Fabrication of InGaAs quantum dots on GaAs(001) by droplet epitaxy
    Mano, T
    Watanabe, K
    Tsukamoto, S
    Fujioka, H
    Oshima, M
    Koguchi, N
    JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) : 504 - 508
  • [28] Red Single-Photon Emission from InAs/AlGaAs Quantum Dots
    Rakhlin, M. V.
    Belyaev, K. G.
    Klimko, G. V.
    Mukhin, I. S.
    Ivanov, S. V.
    Toropov, A. A.
    SEMICONDUCTORS, 2018, 52 (04) : 511 - 513
  • [29] Single-photon emission from exciton complexes in individual quantum dots
    Thompson, RM
    Stevenson, RM
    Shields, AJ
    Farrer, I
    Lobo, CJ
    Ritchie, DA
    Leadbeater, ML
    Pepper, M
    PHYSICAL REVIEW B, 2001, 64 (20)
  • [30] Nanoheterostructures with CdTe/ZnMgSeTe Quantum Dots for Single-Photon Emitters Grown by Molecular Beam Epitaxy
    S. V. Sorokin
    I. V. Sedova
    K. G. Belyaev
    M. V. Rakhlin
    M. A. Yagovkina
    A. A. Toropov
    S. V. Ivanov
    Technical Physics Letters, 2018, 44 : 267 - 270
12345