Electric field-induced changes in photoluminescence and Raman spectra of MoS2 on PVA-coated conductive substrate with nematic liquid crystals: a combined numerical and experimental study

被引:1
作者
Kashif, Muhammad [1 ]
Shabbir, Altamash [2 ]
机构
[1] Lahore Univ Management & Sci LUMS, Dept Phys, Lahore 54792, Pakistan
[2] Natl Univ Sci & Technol, Pakistan Ctr Adv Studies Energy, Dept US, Islamabad 44000, Pakistan
关键词
Crystal structure - Electric fields - Energy gap - Indium compounds - ITO glass - Layered semiconductors - Molybdenum disulfide - Nematic liquid crystals - Photoluminescence - Reliability analysis - Tensile strain - Tin oxides - Transition metals;
D O I
10.1007/s10854-024-12714-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Transition metal dichalcogenides, particularly Molybdenum Disulphide (MoS2), have garnered significant attention in scientific research due to their remarkable optoelectrical characteristics. In this study, the characteristics of MoS2 flakes deposited on indium tin oxide (ITO) glass slides coated with polyvinyl alcohol (PVA) were investigated. The influence of a strain stimulus provided by a nematic liquid crystal (NLC) called 5CB on the MoS2 structure was studied using Raman polar plots, revealing its potential as an electrically controlled light controller. The analysis of Raman Shift showed that the application of tensile strain-induced defects in the MoS2 structure resulted in a lowered bandgap energy level. Photoluminescence (PL) spectroscopy demonstrated that the combination of 5CB and an electric field enhanced the exciton lifetime and decreased the bandgap energy levels. The study employed theoretical and computational modeling of PL/Raman techniques for qualitative and quantitative analysis of the PVA-coated ITO-MoS2 sample. The utilization of Mathematica v 9.0 contributed to the accuracy and reliability of the results, ensuring robust analysis and interpretation of the experimental data. These findings contribute to the understanding of strain-induced effects on MoS2 and highlight the potential of using NLCs for optoelectronic control in MoS2-based devices.
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页数:16
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