Electronic structure of oxygen-containing bismuth compounds

被引：0

作者：

E. A. Kravchenko

N. T. Kuznetsov

V. G. Orlov

Yu. A. Teterin

A. Yu. Teterin

M. P. Shlykov

机构：

[1] Russian Academy of Sciences,Kurnakov Institute of General and Inorganic Chemistry

[2] National Research Center,Kurchatov Institute

[3] Moscow Institute (State University) of Physics and Technology,undefined

[4] Moscow University,undefined

来源：

Russian Journal of Inorganic Chemistry | 2015年 / 60卷

关键词：

Electronic Band Structure; Electron Binding Energy; Strong Electronic Correlation; Bismuth Compound; Valence Band Structure;

D O I：

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中图分类号：

学科分类号：

摘要：

Systematic X-ray photoelectron spectroscopic (XPES) measurements were performed for bismuth compounds: α-Bi2O3, BaBiO3, and NaBiO3. Data on the valence band structure and positions of core electron levels in atoms were gained. Electronic band structure calculations were performed by the fullpotential linear-muffin-tin-orbital (FP-LMTO) method. A comprehensive analysis of the electronic structures was carried out on the basis of comparison of experimental and theoretical data. Our results imply the occurrence of noticeable electronic correlations in the compounds under study, which should be taken into account in interpreting the unusual properties discovered earlier in α-Bi2O3 and in some other oxygen-containing bismuth compounds.

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页码：970 / 974

页数：4

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