Structure and Electrophysical Properties of the Diamond–Graphen–Silicon Carbide Composite

被引：0

作者：

A. A. Shul’zhenko

L. Jaworska

A. N. Sokolov

L. A. Romanko

V. G. Gargin

N. N. Belyavina

V. N. Tkach

A. P. Zakora

机构：

[1] National Academy of Sciences of Ukraine,Bakul Institute for Superhard Materials

[2] The Institute of Advanced Manufacturing Technology,undefined

[3] Taras Shevchenko Kiev National University,undefined

来源：

Journal of Superhard Materials | 2018年 / 40卷

关键词：

diamond; graphene; composite; structure; electrical resistance;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The influence was studied of the addition of n-layer graphene Gn(4) and silicon nanocarbide in the sintering under high pressure and temperature with the silicon impregnation of the mixture on the structure and electrophysical properties of a diamond composite.

引用

页码：435 / 438

页数：3

共 17 条

[1]

Shul’zhenko A.A.(2016)Electrically conductive Polycrystalline superhard material based on diamond and n-layer graphene’s Chemistry Chem. Technol 59 69-74

[2]

Jaworska L.(2017)Phase transitions of n-layer graphenes into diamond at the conditions of high pressures and temperatures J. Superhard Mater. 39 75-82

[3]

Sokolov A.N.(2018)New wear-resistant Superhard diamond composite polycrystalline material J.Superhard Mater 40 1-7

[4]

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