Field-effect transistor with nanowire channel based on heterogeneously doped SOI

被引：1

作者：

Amitonov S.V. ^{[1
]}

Presnov D.E. ^{[2
]}

Rudakov V.I. ^{[3
]}

Krupenin V.A. ^{[1
,4
]}

机构：

[1] Faculty of Physics, Moscow State University, Moscow

[2] Institute of Nuclear Physics, Moscow State University, Moscow

[3] Institute of Physics and Technology, Yaroslavl Affiliate, Russian Academy of Sciences, Yaroslavl

[4] Institute for Nanotechnologies of Microelectronics, Russian Academy of Sciences, Moscow

来源：

Russian Microelectronics | 2013年 / 42卷 / 3期

基金：

俄罗斯基础研究基金会;

关键词：

Silicon Layer; RUSSIAN Microelectronics; Field Effect Transistor; Silicon Nanowire; Isotropic Etching;

D O I：

10.1134/S1063739713030025

中图分类号：

学科分类号：

摘要：

The article presents production methods and test results of field-effect transistor based on silicon nanowire made of heterogeneously arsenic-doped silicon on insulator (SOI). Dopant concentration has been varied over the depth of the silicon layer with a depth of 100 nm from higher than 1020 cm-3 to about 1017 cm-3. The field-effect transistor was manufactured from SOI using electron beam lithography and reactive ion etching. The upper highly conducting part of silicon layer has been used as a substrate for input electrodes and contact pads. The lower sublayer has been used for the formation of semiconductor nanowire. The current-voltage and gate characteristics of the transistor have been measured at 77 and 300 K. The possibility of using a field-effect transistor based on silicon nanowire as a highly sensitive local field-effect and charge sensor with nanometric spatial resolution for application in various fields of physics, technology and medicine has been analyzed. © 2013 Pleiades Publishing, Ltd.

引用

页码：160 / 164

页数：4

共 6 条

[1] Cui Y., Et al., Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species, Science, 293, 5533, pp. 1289-1292, (2001)
[2] Stern E., Et al., Label-Free Immunodetection with CMOS-Compatible Semiconducting Nanowires, Nature, 445, 7127, pp. 519-522, (2007)
[3] Patolsky F., Et al., Electrical Detection of Single Viruses, Proceedings of the National Academy of Sciences of the United States of America, 101, 39, (2004)
[4] Curreli M., Et al., Real-Time, Label-Free Detection of Biological Entities Using Nanowire-Based FETs, IEEE Transactions on Nanotechnology, 7, pp. 651-667, (2008)
[5] Stern E., Et al., Label-Free Electronic Detection of the Antigen-Specific T-Cell Immune Response, Nano Lett., 8, 10, pp. 3310-3314, (2008)
[6] Salfi J., Et al., Direct Observation of Single-Charge-Detection Capability of Nanowire Field-Effect Transistors, Nature Nanotech., 5, 10, pp. 737-741, (2010)

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