X-band AlGaN/GaN HEMTs with high microwave power performance

被引：0
|
作者：
MingZeng Peng
YingKui Zheng
Ke Wei
XiaoJuan Chen
XinYu Liu
机构：
[1] Chinese Academy of Sciences,Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics
来源：
Science China Physics, Mechanics and Astronomy | 2011年 / 54卷
关键词：
GaN; high-electron-mobility transistor; X-band; power-added efficiency;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An X-band AlGaN/GaN high-electron-mobility transistor (HEMT) on SiC substrate with high microwave power performances has been achieved. Its small-signal characteristics with a gate-length of 0.4 μm showed a unity current gain cut-off frequency (fT) of 22 GHz and a maximum oscillation frequency (fmax) of 65 GHz. The GaN HEMT device with a gate width of 1 mm exhibited a continuous-wave saturated output power of 10.2 W and a linear gain of 14.8 dB at 8 GHz, and successfully achieved the power-added efficiency (PAE) as high as 69.2%, which is very suitable for X-band power applications.
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页码：442 / 445
页数：3
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