Direct real-time observation on nanoscale mechanical behavior of freestanding GaN short nano-bridge

被引:0
作者
Shang-Chao Hung
机构
[1] Shih Chien University Kaohsiung Campus,Department of Information Technology and Communication
来源
Journal of Materials Science: Materials in Electronics | 2015年 / 26卷
关键词
Concentrate Load; Stress Contour; Finite Element Model Model; High Stress Gradient; Strain Energy Method;
D O I
暂无
中图分类号
学科分类号
摘要
This paper describes a novel technique to design, fabricate, test, and real-time monitor the freestanding GaN nano-bridge over homogeneous substrate. Stress–strain response and Young’s modulus of GaN nano-bridge for 1.2 μm in span with aspect ratio of ~5 can be extracted by observing mechanical load–deflection response video images and load–displacement curve using instrumented nanoindentation in transmission electron microscopy. A two-dimensional finite element model showed that a positive agreement between principal stresses varies in a beam by experimental observation and stress contour versus indentation depth by numerical simulation. This method could also be applied on the wide range of nano-materials to identify the mechanical response.
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页码:307 / 311
页数:4
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