Inclusions of carbon in ingots of silicon carbide grown by the modified Lely method

被引：0
|
作者：
D. D. Avrov
S. I. Dorozhkin
Yu. M. Tairov
A. Yu. Fadeev
A. O. Lebedev
机构：
[1] St. Petersburg State Electrotechnical University,Ioffe Physicotechnical Institute
[2] Russian Academy of Sciences,undefined
来源：
Semiconductors | 2008年 / 42卷
关键词：
61.72.Dd; 81.05.Hd; 81.10.Bk;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The problem of the appearance of carbon inclusions in single-crystal silicon carbide ingots grown by the modified Lely method (the so-called graphitization of the ingot) is analyzed. It is shown that the process of graphitization of the ingot is not related to a deficit of silicon in the growth cell; in contrast, it is excess of silicon at the growth surface that inhibits the ingot growth rate and gives rise to intense corrosion of the graphite fittings.
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页码：1469 / 1474
页数：5
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