Major effects on microstructure and electrical properties of ZnO-based linear resistance ceramics with MgO changes

被引:0
作者
Jianfeng Zhu
Jingjing Wang
Yong Zhou
Fen Wang
机构
[1] Shaanxi University of Science and Technology,Key Laboratory of Auxiliary Chemistry and Technology for Chemical Industry, Ministry of Education
来源
Journal of Materials Science: Materials in Electronics | 2014年 / 25卷
关键词
MgAl2O4; Nonlinear Coefficient; ZnAl2O4; Boundary Resistivity; Resistance Temperature Coefficient;
D O I
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学科分类号
摘要
The ZnO-based linear resistance ceramics were fabricated from ZnO–Al2O3–MgO–TiO2 at 1,340 °C. The effect of the different doping amounts of MgO on the microstructure and electrical properties were investigated in detail. The optimal sample with the MgO concentration of 7 wt% possesses an energy density of 812 J/cm3 and a resistance temperature coefficient reaches 0.4 × 10−3/°C, which are improved by 8 and 103 %, respectively. Spontaneously, the nonlinear coefficient maintains about 1.15 and the resistivity reaches to 778 Ω cm, increased by 33 %.
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页码:2273 / 2278
页数:5
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