Crystalline structure of YSZ thin films deposited on Si(111) substrate by chemical vapor deposition

被引：0
作者：
Sang-Chul Hwang
Hee-Gyoun Lee
Hyung-Shik Shin
机构：
[1] Chonbuk National University,School of Chemical Engineering
[2] Chonju,Superconductivity Research Department
[3] Korea Atomic Energy Research Institute,undefined
来源：
Korean Journal of Chemical Engineering | 1998年 / 15卷
关键词：
YSZ Thin Film; Si Substrate; CVD; XPS; XRD;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Yttria-stabilized zirconia (YSZ) thin films were formed on Si(111) substrate by chemical vapor deposition (CVD) in a temperature range of 650–800 °C using β-diketone metal chelates. The scanning electron microscopy (SEM) and X-ray diffraction (XRD) data evidenced that YSZ thin films have a smooth surface with fine grains and crystalline structure, respectively. The crystalline structure of YSZ films was affected by the deposition temperature. The X-ray photoelectron spectroscopy (XPS) data indicated that the YSZ film grows thick enough to prevent the diffusion of Si.
引用
收藏
页码：243 / 245
页数：2
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